Volume 3, 2015

International Conference and Summer School on Advanced Silicide Technology 2014, July 19–21, 2014, Tokyo, Japan

ISBN: 978-4-86348-491-7

» Foreword

We, the organizing committee of ICSS-Silicide 2014, are very pleased to publish the JJAP Conference Proceedings for scientists, researchers and students who have interests in the science and technology of semiconducting silicides and related materials.

The ICSS-Silicide 2014 was held on July 19–21 of 2014 at Tokyo University of Science, Tokyo, Japan. Since 1997, Professional Group on Semiconducting Silicides and Related Materials of the Japan Society of Applied Physics (JSAP) has held the annual school on semiconducting silicides and related materials every summer for Japanese students and young scientists. This international conference and summer school were held to commemorate the 16th summer school with the support of JSAP. The ICSS-Silicide 2014 was organized by three parts, seminars on basic and advanced silicides by distinguished scientists and researchers, symposium of contributed papers and practice classes on thermoelectronics.

More than 110 researchers from Japan, Russia, Republic of China, UK, Moldova, and Belarus, participated in the conference in which 2 plenary talks, 4 invited talks, and 11 contributed talks and 64 posters were presented.

Based on the research activities presented, the papers submitted to this conference were screened through the standard review process of the Japanese Journal of Applied Physics. The peer-reviewed 22 papers were published in this JJAP Conference Proceedings. The other papers were published in the special issue of Japanese Journal of Applied Physics, which contains peer-reviewed 22 papers. The selection was made in accordance with the reviewing standards of the Japanese Journal of Applied Physics.

We would like to express our gratitude to all reviewers and the organizing committee members for their contributions, and to JSAP and Tokyo University of Science for their financial supports.

Yoshikazu TERAI
Conference chair of ICSS-Silicide 2014
Kyushu Institute of Technology, Japan

Light emission and detection materials

011101

Electric properties of carbon-doped n-type β-FeSi₂/p-type Si heterojunction diodes

Motoki Takahara, Tarek M. Mostafa, Ryuji Baba, Suguru Funasaki, Mahmoud Shaban, Nathaporn Promros, Tsuyoshi Yoshitake

PDF (1.1 MB)

011102

Epitaxial growth of n-type β-FeSi₂ thin films on p-type Si(111) substrates by radio-frequency magnetron sputtering and rectifying action of heterojunctions

Tarek M. Mostafa, Motoki Takahara, Ryuji Baba, Suguru Funasaki, Mahmoud Shaban, Nathaporn Promros, Aki Tominaga, Maiko Nishibori, Tsuyoshi Yoshitake

PDF (1.2 MB)

011103

Fabrication and characterization of Mg₂Si pn-junction Photodiode with a ring electrode

Kenta Daitoku, Masaaki Takezaki, Shuntaro Tanigawa, Daiju Tsuya, Haruhiko Udono

PDF (1.2 MB)

011104

Formation and properties of p–i–n diodes based on hydrogenated amorphous silicon with embedded CrSi₂, Mg₂Si and Ca₂Si nanocrystallites for energy conversion applications

Nikolay G. Galkin, Konstantin N. Galkin, Igor M. Chernev, Radek Fajgar, The Ha Stuchlikova, Jiri Stuchlik, Zdenek Remes

PDF (1.6 MB)

011105

IR absorption analysis of oxidation behaviors of nano-composite phases with β-FeSi₂ nanocrystals and Si

Kosuke Morita, Yuya Noguchi, Tatsuya Nakamura, Hiroyuki Kobayashi, Takahide Tatsumi, Yuki Kawakubo, Yoshihito Maeda

PDF (388 KB)

011106

Photoluminescence property of nano-composite phases of β-FeSi₂ nanocrystals embedded in SiO₂

Tatsuya Nakamura, Takahide Tatsumi, Kosuke Morita, Hiroyuki Kobayashi, Yuya Noguchi, Yuki Kawakubo, Yoshihito Maeda

PDF (775 KB)

011107

Photoluminescence enhancement of β-FeSi₂ nanocrystals controlled by transport of holes in Cu-doped n-type Si substrates

Yoshihito Maeda, Takahide Tatsumi, Yuya Noguchi, Yuki Kawakubo, Hiroyuki Kobayashi, Kazumasa Narumi, Seiji Sakai

PDF (639 KB)

011108

Enhancement of photoluminescence from Cu-doped β-FeSi₂/Si heterostructures

Yoshihito Maeda, Takahide Tatsumi, Yuki Kawakubo, Yuya Noguchi, Kosuke Morita, Hiroyuki Kobayashi, Kazumasa Narumi

PDF (497 KB)

011109

Effects of lattice deformations on Raman spectra in β-FeSi₂ epitaxial films

Yoshikazu Terai, Haruki Yamaguchi, Hiroaki Tsukamoto, Tetsu Hattori, Takahiko Higashi

PDF (1.2 MB)

Thermoelectric materials

011201

Band structure characterization of K₈Ga₈Si₃₈ clathrates by optical measurement

Masaru Iioka, Haruhiko Udono, Motoharu Imai, Masato Aoki

PDF (911 KB)

011202

Mg₂Si thermoelectric device fabrication with reused-silicon

Shigeyuki Nakamura, Yoshihisa Mori, Ken’ichi Takarabe

PDF (1.4 MB)

Nanostructures

011301

Deposition of magnesium silicide nanoparticles by the combination of vacuum evaporation and hydrogen plasma treatment

Jiri Stuchlik, The Ha Stuchlikova, Anna Artemenko, Zdenek Remes

PDF (1.4 MB)

011302

The laser ablation as a perspective technique for the deposition of metal-silicide nanoparticles in situ embedded in PECVD of Si:H thin films

The Ha Stuchlikova, Radek Fajgar, Martin Kostejn, Vladislav Drinek, Zdenek Remes, Jiri Stuchlik

PDF (859 KB)

Photovoltaic materials

011401

Effect of grain areas on minority-carrier lifetime in undoped n-type BaSi₂ on Si(111)

Ryota Takabe, Kosuke O. Hara, Masakazu Baba, Weijie Du, Naoya Shimada, Kaoru Toko, Noritaka Usami, Takashi Suemasu

PDF (946 KB)

011402

Removal of Ge Islands in al-induced layer-exchanged Ge thin films on glass substrates by selective etching technique

Koki Nakazawa, Kaoru Toko, Takashi Suemasu

PDF (1.2 MB)

011403

Investigation of surface potential distributions of phosphorus-doped n-BaSi₂ thin-films by Kelvin probe force microscopy

Daichi Tsukahara, Masakazu Baba, Ryota Takabe, Kaoru Toko, Takashi Suemasu

PDF (948 KB)

011404

Effects of triphenylborane addition to decaphenylcyclopentasilane thin films

Takeo Oku, Naoki Hibi, Atsushi Suzuki, Tsuyoshi Akiyama, Masahiro Yamada, Sakiko Fukunishi, Kazufumi Kohno

PDF (1.1 MB)

011405

Fabrication and characterization of silicon naphthalocyanine/fullerene-based photovoltaic devices with inverted structures

Haruto Maruhashi, Takeo Oku, Atsushi Suzuki, Tsuyoshi Akiyama

PDF (1.1 MB)

Spintronics materials

011501

Fabrication of spin valve junctions based on Fe₃Si/FeSi₂/Fe₃Si trilayered films

Yuki Asai, Ken-ichiro Sakai, Kazuya Ishibashi, Kaoru Takeda, Tsuyoshi Yoshitake

PDF (1.1 MB)

011502

Current-induced magnetization switching at low current densities in current-perpendicular-to-plane structural Fe₃Si/FeSi₂ artificial lattices with various cross-sectional areas

Ken-ichiro Sakai, Yūki Asai, Yūta Noda, Takeshi Daio, Aki Tominaga, Kaoru Takeda, Tsuyoshi Yoshitake

PDF (1.4 MB)

011503

Observation of magnetization alignment switching in Fe₃Si/FeSi₂ artificial lattices by polarized neutron reflection

Ken-ichiro Sakai, Yūki Asai, Masayasu Takeda, Kazuya Ishibashi, Yūta Noda, Kaoru Takeda, Tsuyoshi Yoshitake

PDF (791 KB)

011504

Spin valve behavior in current-perpendicular-to-plane crossover structural Fe₃Si/FeSi₂/Fe₃Si trilayered junctions

Yuki Asai, Ken-ichiro Sakai, Kazuya Ishibashi, Kaoru Takeda, Tsuyoshi Yoshitake

PDF (1.2 MB)

Table of Contents

Volume 3, 2015

International Conference and Summer School on Advanced Silicide Technology 2014, July 19–21, 2014, Tokyo, Japan

Light emission and detection materials

Thermoelectric materials

Nanostructures

Photovoltaic materials

Spintronics materials