Volume 5, 2017

Asia-Pacific Conference on Semiconducting Silicides and Related Materials — Science and Technology Towards Sustainable Electronics (APAC Silicide 2016), July 16-18, 2016, Fukuoka, Japan

ISBN: 978-4-86348-617-1

» Foreword

We, the organizing committee of APAC-Silicide 2016, are very pleased to publish the Japanese Journal of Applied Physics (JJAP) Conference Proceedings for scientists, researchers and students who have interests in the science and technology of semiconducting silicides and related materials.

APAC-Silicide 2016 was held on July 16–18 of 2016 at Nishijin Plaza, Kyushu University, Fukuoka, Japan. Since 2006, Professional Group on Semiconducting Silicides and Related Materials of the Japan Society of Applied Physics has held a series of international conferences named APAC-Silicide every three to four years. APAC-Silicide 2016 is the 4th conference of APAC-Silicide. More than 90 researchers from Japan, the United States, Russia, and Belarus, participated in the conference in which 1 plenary talk, 6 invited talks, and 22 contributed talks and 47 posters were presented.

Based on the research activities presented, the papers submitted to this conference were screened through the standard review process of the JJAP. The peer-reviewed 20 papers were published in this JJAP Conference Proceedings. The other papers were published in the special issue of Japanese Journal of Applied Physics, which contains peer-reviewed 27 papers. The selection was made in accordance with the reviewing standards of the JJAP Conference Proceedings.

We would like to express our gratitude to all reviewers and the organizing committee members for their contributions, and to JSAP and Kyushu University (Advanced Graduate Program in Global Strategy for Green Asia and Research, Education Center for Advanced Energy Materials, Devices, and Systems) for their financial supports.

Takashi Suemasu
Conference chair of APAC Silicide 2016
University of Tsukuba, Japan

Light emission and detection materials

011101

Observation of pn-junction depth in MgSi diodes fabricated by short period thermal annealing

Yuma Onizawa, Tomohiro Akiyama, Nobuhiko Hori, Fumitaka Esaka, Haruhiko Udono

PDF (1.1 MB)

011102

Fabrication of MgSi pn-junction photodiode with shallow mesa-structure and ring electrode

Tomohiro Akiyama, Nobuhiko Hori, Shuntaro Tanigawa, Daiju Tsuya, Haruhiko Udono

PDF (757 KB)

011103

Effects of nitrogen doping on optical and electrical properties of nanocrystalline FeSi films prepared by sputtering

Tomohiro Nogami, Hirokazu Kishimoto, Ryuji Baba, Nathaporn Promros, Tsuyoshi Yoshitake

PDF (1.3 MB)

011104

Ion channeling measurements of β-FeSi films epitaxially grown on Si(111) and their analysis by multiple scattering theory

Masaya Fuchi, Mikihiro Arima, Kazumasa Narumi, Yoshikazu Terai, Yoshihito Maeda

PDF (851 KB)

011105

Analysis of oxidation behavior in nanocrystal β-FeSi/Si composites by rutherford backscattering spectrometry and computation of diffusion flux

Mikihiro Arima, Masaya Fuchi, Kazumasa Narumi, Yoshihito Maeda

PDF (1.0 MB)

011106

Dependence of direct transition energy on growth temperature in β-FeSi epitaxial films

Motoki Iinuma, Hiroaki Tsukamoto, Naoki Murakoso, Haruki Yamaguchi, Yoshikazu Terai

PDF (770 KB)

011107

Effects of source materials on fabrication of β-FeSi thin films by RDE method

Haruya Kobayashi, Keisuke Sato, Yoshiaki Hara

PDF (1023 KB)

011108

Solid phase epitaxy formation of silicon-GaSb based heterostructures

Dmitry L. Goroshko, Evgeniy A. Chusovitin, Igor M. Chernev, Alexander V. Shevlyagin, Konstantin N. Galkin, Nikolay G. Galkin

PDF (1.2 MB)

Photovltaic materials

011201

Realization of crystalline BaSi thin films by vacuum evaporation on (111)-oriented Si layers fabricated by aluminum induced crystallization

Jefferson A. Wibowo, Isao Takahashi, Kosuke O. Hara, Noritaka Usami

PDF (1.1 MB)

011202

Preferred orientation of BaSi thin films fabricated by thermal evaporation

Kosuke O. Hara, Cham Thi Trinh, Yoshihiko Nakagawa, Yasuyoshi Kurokawa, Keisuke Arimoto, Junji Yamanaka, Kiyokazu Nakagawa, Noritaka Usami

PDF (442 KB)

011203

Formation and properties of crystalline BaSi thin films obtained by solid phase epitaxy on Si(111)

Dmitry Fomin, Viktor Dubov, Konstantin Galkin, Nikolay Galkin, Rafael Batalov, Vladimir Shustov

PDF (753 KB)

011204

Growth of p-type β-FeSi polycrystalline films by RF magnetron sputtering

Shuya Ikeda, Kazuya Ogi, Tetsu Hattori, Takahiko Higashi, Yoshikazu Terai

PDF (926 KB)

Thermoelectric materials

011301

Oxidation resistance of impurity doped MgSi grown from the melt

Shu Konno, Tsubasa Otubo, Kohei Nakano, Haruhiko Udono

PDF (1.1 MB)

011302

Solid-phase synthesis of MgSi thin film on sapphire substrate

Motomu Saijo, Kazuhiro Kunitake, Ryota Sasajima, Yuta Takagi, Naoyuki Sato, Takashi Ikehata

PDF (1.2 MB)

011303

In-situ formation of magnesium silicide nanoparticles on the surface of the hydrogenated silicon films

The Ha Stuchlikova, Vlastimil Pic, Martin Ledinský, Adam Purkrt, Zdenek Remes, Jiri Stuchlik

PDF (1.1 MB)

Nanostructures

011401

Phase composition evolution of iron silicide nanocrystals in the course of embedding into monocrystalline silicon

Evgeniy A. Chusovitin, Dmitry L. Goroshko, Sergey A. Dotsenko, Alexander V. Shevlyagin, Nikolay G. Galkin, Anton K. Gutakovskii

PDF (1.4 MB)

011402

Rod-like precipitates formed in vapor-deposited Fe-Si film

Shin-ichiro Kondo, Takao Morimura, Hiromichi Nakashima

PDF (1.1 MB)

011403

Epitaxial relations, crystalline structure and defects in the double Si(111)/hR6 CaSi/Si(111) heterostructures

N. G. Galkin, S. A. Dotsenko, K. N. Galkin, L. Dózsa, I. Cora, B. Pécz

PDF (1.6 MB)

Spintronics materials

011501

Temperature-dependent magnetoresistance effects in FeSi/FeSi/FeSi trilayered spin valve junctions

Kazuya Ishibashi, Kazuki Kudo, Kazutoshi Nakashima, Yuki Asai, Ken-ichiro Sakai, Hiroyuki Deguchi, Tsuyoshi Yoshitake

PDF (2.9 MB)

011502

Film structures of Fe/B-doped carbon/FeSi spin valve junctions

Kazuki Kudo, Kazutoshi Nakashima, Satoshi Takeichi, Rezwan Ahmed, Seigi Mizuno, Ken-ichiro Sakai, Masahiko Nishijima, Tsuyoshi Yoshitake

PDF (1.0 MB)

JSAP Journals

JJAP Conference Proceedings

Table of Contents

Volume 5, 2017

Asia-Pacific Conference on Semiconducting Silicides and Related Materials — Science and Technology Towards Sustainable Electronics (APAC Silicide 2016), July 16-18, 2016, Fukuoka, Japan

Light emission and detection materials

Observation of pn-junction depth in MgSi diodes fabricated by short period thermal annealing

Fabrication of MgSi pn-junction photodiode with shallow mesa-structure and ring electrode

Effects of nitrogen doping on optical and electrical properties of nanocrystalline FeSi films prepared by sputtering

Ion channeling measurements of β-FeSi films epitaxially grown on Si(111) and their analysis by multiple scattering theory

Analysis of oxidation behavior in nanocrystal β-FeSi/Si composites by rutherford backscattering spectrometry and computation of diffusion flux

Dependence of direct transition energy on growth temperature in β-FeSi epitaxial films

Effects of source materials on fabrication of β-FeSi thin films by RDE method

Solid phase epitaxy formation of silicon-GaSb based heterostructures

Photovltaic materials

Realization of crystalline BaSi thin films by vacuum evaporation on (111)-oriented Si layers fabricated by aluminum induced crystallization

Preferred orientation of BaSi thin films fabricated by thermal evaporation

Formation and properties of crystalline BaSi thin films obtained by solid phase epitaxy on Si(111)

Growth of p-type β-FeSi polycrystalline films by RF magnetron sputtering

Thermoelectric materials

Oxidation resistance of impurity doped MgSi grown from the melt

Solid-phase synthesis of MgSi thin film on sapphire substrate

In-situ formation of magnesium silicide nanoparticles on the surface of the hydrogenated silicon films

Nanostructures

Phase composition evolution of iron silicide nanocrystals in the course of embedding into monocrystalline silicon

Rod-like precipitates formed in vapor-deposited Fe-Si film

Epitaxial relations, crystalline structure and defects in the double Si(111)/hR6 CaSi/Si(111) heterostructures

Spintronics materials

Temperature-dependent magnetoresistance effects in FeSi/FeSi/FeSi trilayered spin valve junctions

Film structures of Fe/B-doped carbon/FeSi spin valve junctions