JJAP Conf. Proc. 2, 011206 (2014) doi:10.7567/JJAPCP.2.011206
Investigation on defects of Sb doped SnO2 thin films by positron annihilation
- 1Key Laboratory of Nuclear Solid State Physics Hubei Province, School of Physics and Technology, Wuhan University, Wuhan 430072, China
- 2National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki 305-8565, Japan
- Received June 03, 2014
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Undoped and Sb doped tin oxide thin films were fabricated by the dip-coating technique through a propylene oxide assisted sol–gel method. Atomic force microscope measurements reveal that the grain size increased after being calcined at higher temperature; while increasing the dopant content leads to a reduction in grain size and a corresponding increase in the concentration of grain boundaries. Positron annihilation spectroscopy analysis shows the defects are reduced with increasing Sb content to 5%; however, further increasing the doping level to 10% introduces more defects to the films. At all doping levels, the defects in Sb doped tin oxide films decreases significantly upon elevating the calcination temperature.
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