JJAP Conf. Proc. 3, 011101 (2015) doi:10.7567/JJAPCP.3.011101
Electric properties of carbon-doped n-type β-FeSi2/p-type Si heterojunction diodes
- 1Department of Applied Science for Electronics and Materials, Kyushu University, Kasuga, Fukuoka 816-8580, Japan
- 2Department of Electrical Engineering, Aswan Faculty of Engineering, Aswan University, Aswan 81542, Egypt
- 3Department of Physics, Faculty of Science, King Mongkut’s Institute of Technology Ladkrabang, Chalongkrung Road, Bangkok 10520, Thailand
- Received July 18, 2014
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Undoped and C-doped n-type β-FeSi2 thin films were epitaxially grown on p-type Si substrates by sputtering and their heterojunction diode performances were experimentally studied. The near-infrared photodetection, at a wavelength of 1.3 µm, in these heterojunction diodes was clearly improved as compared to the heterojunctions comprising undoped-β-FeSi2. From X-ray diffraction and Raman spectroscopic measurements, there were no evident structural differences between the undoped and C-doped films. C-doping hardly affects the crystallization and epitaxial growth of β-FeSi2. The enhancement in the diode performance by C-doping might be owing to C atoms terminating dangling bonds and compensating defects in β-FeSi2 crystals.
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