JJAP Conference Proceedings

JJAP Conf. Proc. 3, 011103 (2015) doi:10.7567/JJAPCP.3.011103

Fabrication and characterization of MgSi pn-junction Photodiode with a ring electrode

Kenta Daitoku1, Masaaki Takezaki1, Shuntaro Tanigawa2, Daiju Tsuya2, Haruhiko Udono1

  1. 1Ibaraki University, Hitachi, Ibaraki 316-8511, Japan
  2. 2National Institute for Materials Science (NIMS), Tsukuba, Ibaraki 305-0047, Japan
  • Received July 31, 2014
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Abstract

We have fabricated Mg2Si pn-junction photodiodes with an Au-ring electrode and a SiO2 passivation layer by means of a lift-off photolithography process. Current–voltage (I–V) characteristics of the photodiodes showed obvious rectifying behavior at room temperature. The ideality factor of n determined from the slope of I–V characteristics was 1.76–1.92. The photodiode showed a photoresponse with threshold energy of approximately 0.6 eV under a zero-bias condition. The intensity of peak photoresponse was improved approximately three times compared with the opaque Au-circular electrode type Mg2Si photodiode previously reported.

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