JJAP Conference Proceedings

JJAP Conf. Proc. 3, 011107 (2015) doi:10.7567/JJAPCP.3.011107

Photoluminescence enhancement of β-FeSi nanocrystals controlled by transport of holes in Cu-doped n-type Si substrates

Yoshihito Maeda1,2, Takahide Tatsumi1, Yuya Noguchi1, Yuki Kawakubo1, Hiroyuki Kobayashi1, Kazumasa Narumi2, Seiji Sakai2

  1. 1Department of Computer Science and Electronics, Kyushu Institute of Technology, Iizuka, Fukuoka 820-8502, Japan
  2. 2Advanced Science Research Center, Japan Atomic Energy Agency, Tokai, Ibaraki 319-1195, Japan
  • Received June 22, 2014
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Abstract

We have investigated PL behavior of β-FeSi2 nanocrystals controlled by transport of holes in Cu-doped n-type Si substrates. PL enhancement was observed and PCI-PL measurements revealed that PL enhancement was attributed to a transport process of holes with a larger time constant in Cu-doped n-Si substrate in which an interval trap process is controlled by Cu doping.

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References

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