JJAP Conference Proceedings

JJAP Conf. Proc. 3, 011108 (2015) doi:10.7567/JJAPCP.3.011108

Enhancement of photoluminescence from Cu-doped β-FeSi/Si heterostructures

Yoshihito Maeda1,2, Takahide Tatsumi1, Yuki Kawakubo1, Yuya Noguchi1, Kosuke Morita1, Hiroyuki Kobayashi1, Kazumasa Narumi2

  1. 1Department of Computer Science and Electronics, Kyushu Institute of Technology, Iizuka, Fukuoka 820-8502, Japan
  2. 2Advanced Science Research Center, Japan Atomic Energy Agency, Tokai, Ibaraki 319-1195, Japan
  • Received July 01, 2014
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Abstract

We have investigated photoluminescence (PL) behaviors of the Cu-doped β-FeSi2 thin film/Si heterostructure. Pronounced enhancement of an intrinsic A band and an impurity-related C band emissions has been observed in all the Cu-doped samples. The photo-carrier injection (PCI)-PL measurements have revealed that the PL enhancement is attributed to dynamic process of migration of holes where a repeated trap process of holes can be controlled by Cu-doping.

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References

  1. 1 Y. Maeda, Y. Terai, M. Itakura, and N. Kuwano, Thin Solid Films 461, 160 (2004).
  2. 2 Y. Terai and Y. Maeda, Appl. Phys. Lett. 84, 903 (2004).
  3. 3 K. Akiyama, S. Kaneko, H. Funakubo, and M. Itakura, Appl. Phys. Lett. 91, 071903 (2007).
  4. 4 Y. Maeda, K. Nishimura, T. Nakajima, B. Matsukura, K. Narumi, and S. Sakai, Phys. Status Solidi C 9, 1884 (2012).
  5. 5 Y. Maeda, T. Tatsumi, Y. Kawakubo, Y. Noguchi, H. Kobayashi, K. Narumi, and S. Sakai, Phys. Status Solidi C (in press).

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