JJAP Conference Proceedings

JJAP Conf. Proc. 3, 011202 (2015) doi:10.7567/JJAPCP.3.011202

MgSi thermoelectric device fabrication with reused-silicon

Shigeyuki Nakamura1, Yoshihisa Mori2, Ken’ichi Takarabe2

  1. 1Tsuyama National College of Technology Tsuyama, Tsuyama, Okayama 708-8509, Japan
  2. 2Fuculty of Science, Okayama University of Science, Tsuyama, Okayama 708-0005, Japan
  • Received July 18, 2014
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Abstract

Mg2Si thermoelectric devices are fabricated using reused-Si by a liquid–solid phase reaction and a spark plasma sintering process. Seebeck coefficients are comparable to those for a device prepared with pure Si. However electric conductivities are lower, resulting in lower power factors. Al-doping up to 4% is found to be effective to improve the electrical conductivity.

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