JJAP Conference Proceedings

JJAP Conf. Proc. 3, 011202 (2015) doi:10.7567/JJAPCP.3.011202

Mg2Si thermoelectric device fabrication with reused-silicon

Shigeyuki Nakamura1, Yoshihisa Mori2, Ken’ichi Takarabe2

  1. 1Tsuyama National College of Technology Tsuyama, Tsuyama, Okayama 708-8509, Japan
  2. 2Fuculty of Science, Okayama University of Science, Tsuyama, Okayama 708-0005, Japan
  • Received July 18, 2014
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Mg2Si thermoelectric devices are fabricated using reused-Si by a liquid–solid phase reaction and a spark plasma sintering process. Seebeck coefficients are comparable to those for a device prepared with pure Si. However electric conductivities are lower, resulting in lower power factors. Al-doping up to 4% is found to be effective to improve the electrical conductivity.

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  1. 1 M. Fukao, T. Iida, K. Makino, M. Akasaka, Y. Oguni, and Y. Takanashi, MRS Proc. 1044, 247 (2008).
  2. 2 S. Nakamura, Y. Mori, and K. Takarabe, Phys. Status Solidi C 10, 1145 (2013).
  3. 3 S. Nakamura, Y. Mori, and K. Takarabe, J. Electron. Mater. (2014) [DOI: 10.1007/s11664-014-3000-1].
  4. 4 M. Akasaka, T. Iida, Y. Mito, T. Omori, Y. Oguni, S. Yokoyama, K. Nishio, and Y. Yakanashi, MRS Proc. 1044, U6.15.1 (2008).
  5. 5 Y. Honda, T. Iida, T. Sakamoto, S. Sakuragi, Y. Taguchi, Y. Mito, T. Nemoto, T. Nkajima, H. Tabuchi, K. Nishio, and Y. Takanashi, MRS Proc. 1218, Z05-17 (2010).
  6. 6 T. Sakamoto, T. Iida, N. Fukushima, Y. Honda, M. Tada, Y. Taguchi, Y. Mito, H. Taguchi, and Y. Takanashi, Thin Solid Films 519, 8528 (2011).
  7. 7 M. Umemoto, Y. Shirai, and K. Tsuchiya, 4th Pacific Rim Int. Conf. on Advanced Mater. and Processing, 2001, p. 2145.