JJAP Conference Proceedings

JJAP Conf. Proc. 3, 011401 (2015) doi:10.7567/JJAPCP.3.011401

Effect of grain areas on minority-carrier lifetime in undoped n-type BaSi on Si(111)

Ryota Takabe1, Kosuke O. Hara2, Masakazu Baba1, Weijie Du1, Naoya Shimada1, Kaoru Toko1, Noritaka Usami2,3, Takashi Suemasu1,3

  1. 1University of Tsukuba, Institute of Applied Physics, Tsukuba, Ibaraki 305-8573, Japan
  2. 2Nagoya University, Nagoya 464-8603, Japan
  3. 3JST-CREST, Chiyoda, Tokyo 102-0075, Japan
  • Received July 16, 2014
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Abstract

We have grown undoped n-BaSi2 epitaxial films with different grain sizes on Si(111) and characterized their minority-carrier lifetime, τ. We found that τ value in undoped n-BaSi2 did not depend on average grain area, but on surface condition. The samples with mirror surfaces had large τ of about 0.4 µs and those with cloudy surface small τ of about 8 µs. We tried to cap the sample surface in situ with a 3 nm Ba or Si layer in order to control the surface of BaSi2, and succeeded to intentionally form BaSi2 with large τ.

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