JJAP Conf. Proc. 3, 011401 (2015) doi:10.7567/JJAPCP.3.011401
Effect of grain areas on minority-carrier lifetime in undoped n-type BaSi2 on Si(111)
- 1University of Tsukuba, Institute of Applied Physics, Tsukuba, Ibaraki 305-8573, Japan
- 2Nagoya University, Nagoya 464-8603, Japan
- 3JST-CREST, Chiyoda, Tokyo 102-0075, Japan
- Received July 16, 2014
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Abstract
We have grown undoped n-BaSi2 epitaxial films with different grain sizes on Si(111) and characterized their minority-carrier lifetime, τ. We found that τ value in undoped n-BaSi2 did not depend on average grain area, but on surface condition. The samples with mirror surfaces had large τ of about 0.4 µs and those with cloudy surface small τ of about 8 µs. We tried to cap the sample surface in situ with a 3 nm Ba or Si layer in order to control the surface of BaSi2, and succeeded to intentionally form BaSi2 with large τ.
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