JJAP Conference Proceedings

JJAP Conf. Proc. 3, 011403 (2015) doi:10.7567/JJAPCP.3.011403

Investigation of surface potential distributions of phosphorus-doped n-BaSi thin-films by kelvin probe force microscopy

Daichi Tsukahara1, Masakazu Baba1, Ryota Takabe1, Kaoru Toko1, Takashi Suemasu1,2

  1. 1University of Tsukuba, Institute of Applied Physics, Tsukuba, Ibaraki 305-8573, Japan
  2. 2JST-CREST, Chiyoda, Tokyo 102-0076, Japan
  • Received July 18, 2014
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Abstract

We investigated the surface potential distributions around grain boundaries (GBs) in phosphorus (P)-doped n-BaSi2 thin-films by Kelvin probe force microscopy (KFM) and the crystal planes constituting GBs by transmission electron microscopy (TEM). By KFM measurements, it was found that the GBs in P-doped n-BaSi2 are different from those in undoped BaSi2; undoped n-BaSi2 has a downward band bending around the GBs with barrier heights of approximately 30 meV. In contrast, P-doped n-BaSi2 has an upward band bending with barrier heights of approximately 15 meV. TEM observation revealed that most of the GBs in P-doped BaSi2 are composed of BaSi2 (011)/($0\bar{1}1$) planes. This result is the same as that in undoped BaSi2.

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