JJAP Conf. Proc. 3, 011504 (2015) doi:10.7567/JJAPCP.3.011504
Spin valve behavior in current-perpendicular-to-plane crossover structural Fe3Si/FeSi2/Fe3Si trilayered junctions
- 1Department of Applied Science for Electronics and Materials, Kyushu University, Kasuga, Fukuoka 816-8580, Japan
- 2Department of Control and Information Systems Engineering, Kurume National College of Technology, Kurume, Fukuoka 830-8555, Japan
- 3Department of Electrical Engineering, Fukuoka Institute of Technology, Fukuoka 811-0295, Japan
- Received July 31, 2014
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Current-perpendicular-to-plane structural Fe3Si/FeSi2/Fe3Si trilayered junctions were prepared on Si(111) by facing targets direct-current sputtering combined with a mask method. The shape of magnetization curves evidently exhibited that an antiparallel alignment is realized owing to a difference in the coercive force between the top and bottom Fe3Si layers. In addition, it was demonstrated that the antiparallel alignment in the wide range of applied magnetic field can be realized by forming a crossover structure, which is owing to an enhanced difference in the effective magnetic field between the top and bottom Fe3Si layers aligned perpendicularly to each other.
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