JJAP Conference Proceedings

JJAP Conf. Proc. 5, 011101 (2017) doi:10.7567/JJAPCP.5.011101

Observation of pn-junction depth in MgSi diodes fabricated by short period thermal annealing

Yuma Onizawa1, Tomohiro Akiyama1, Nobuhiko Hori1, Fumitaka Esaka2, Haruhiko Udono1

  1. 1Ibaraki University, Hitachi, Ibaraki 316-8511, Japan
  2. 2Japan Atomic Energy Agency (JAEA), Tokai, Ibaraki 319-1195, Japan
  • Received September 14, 2016
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Abstract

We have fabricated Mg2Si pn-junction diodes by short-period (30 s and 1 min) annealing between 400 and 480 °C and evaluated the pn-junction depth by EBIC and VC observations. The pn-junction depth of approximately 6 and 30 µm was formed for the annealing conditions of 400 °C, 30 s and 480 °C, 1 min, respectively. By comparing the Ag depth profiles determined by SIMS, we estimated the activation ratio at the pn-junction of approximately 8 and 10% for annealing at 450 and 480 °C, respectively. All diodes showed clear rectifying behavior in J–V characteristic and the spectral photosensitivity below approximately 1.8 µm under zero bias condition.

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