JJAP Conference Proceedings

JJAP Conf. Proc. 5, 011102 (2017) doi:10.7567/JJAPCP.5.011102

Fabrication of MgSi pn-junction photodiode with shallow mesa-structure and ring electrode

Tomohiro Akiyama1, Nobuhiko Hori1, Shuntaro Tanigawa2, Daiju Tsuya2, Haruhiko Udono1

  1. 1Graduate School of Science and Engineering, Ibaraki University, Hitachi, Ibaraki 316-8511, Japan
  2. 2National Institute for Materials Science, Tsukuba, Ibaraki 305-0047, Japan
  • Received September 14, 2016
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We fabricated Mg2Si pn-juncion photodiodes with a shallow mesa structure and a ring electrode using a conventional photolithography process and investigated their electrical and optical character. Dark current densities of about 0.18 and 9 × 10−4 A/cm2 were obtained at room temperature and 100 K under the reverse bias at −3 V. Photoresponse below about 2.1 µm was observed in the shallow mesa-type PDs at room temperature operation. The photosensitivity at 1.31 µm was determined about 22 and 42 mA/W for the bias voltage at 0 and −0.1 V, respectively.

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