JJAP Conf. Proc. 5, 011104 (2017) doi:10.7567/JJAPCP.5.011104
Ion channeling measurements of β-FeSi2 films epitaxially grown on Si(111) and their analysis by multiple scattering theory
- 1Department of Computer Science and Electronics, Kyushu Institute of Technology, Fukuoka 820-8502, Japan
- 2National Institutes for Quantum and Radiological Science and Technology (QST), Takasaki, Gunma 370-1292, Japan
- Received August 03, 2016
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We have evaluated β-FeSi2 (110), (101) planes epitaxially grown on Si(111) by using ion beam analysis. Unexpected large displacements were deduced from analysis based on single ion scattering. We have discussed multiple ion scattering caused inside the film and obtained the comparatively reasonable atomic displacement of Δx = 0.04 nm that is close to one sixth of one step height of six domains stacking on the (111) planes. This result suggests that multiple scattering may be attributed to the atomic displacement due to the domain stacking faults.
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