JJAP Conf. Proc. 5, 011106 (2017) doi:10.7567/JJAPCP.5.011106
Dependence of direct transition energy on growth temperature in β-FeSi2 epitaxial films
- 1Department of Computer Science and Electronics, Kyushu Institute of Technology, Fukuoka 820-8502, Japan
- 2Graduate School of Science and Engineering, Kagoshima University, Kagoshima 890-0065, Japan
- Received April 05, 2017
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Direct transition energy (Eg) of β-FeSi2/Si(111) epitaxial films grown at different growth temperatures (Ts) was investigated by photoreflectance (PR) measurements. In Raman spectra, the wavenumber of Ag-mode in Fe–Fe and Si–Si vibrations shifted to higher wavenumber with decrease of Ts. The estimated Si/Fe composition ratio of the epitaxial layer became small (Si-poor) in the films grown at lower Ts. In PR spectra, Eg shifted to higher energy with decrease of Ts. These results show that the modification of electronic structure by a strain induced at β-FeSi2/Si hetero-interface is suppressed by an increase of Si vacancies in β-FeSi2.
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