JJAP Conference Proceedings

JJAP Conf. Proc. 5, 011203 (2017) doi:10.7567/JJAPCP.5.011203

Formation and properties of crystalline BaSi thin films obtained by solid phase epitaxy on Si(111)

Dmitry Fomin1, Viktor Dubov1, Konstantin Galkin2, Nikolay Galkin2, Rafael Batalov3, Vladimir Shustov3

  1. 1Amur State University, 675027, Ignatievskoe Shosse, 21, Blagoveshchensk, Russia
  2. 2Institute of Automation and Control Processes of FEB RAS, 690041, Radio, 5, Vladivostok, Russia
  3. 3Kazan Physical-Technical Institute of RAS, Sibirsky trakt, 10/7, 420029, Kazan, Russia
  • Received September 02, 2016
  • PDF (753 KB) |

Abstract

Barium disilicide may be considered to be a promising material for solar cells. Thin films of BaSi2 can be developed in various ways. In this paper, we discuss the properties of a barium silicide film obtained by a solid phase epitaxy. GIXRD method showed the presence of BaSi2 in the film which was obtained at the temperature T = 600, 750 and T = 800 °C. We hypothesize that the co-precipitation of Ba and Si can solve this problem and find that the increase of the annealing temperature results in better film crystallization (for the selected temperature).

Creative Commons License Content from this work may be used under the terms of the Creative Commons Attribution 4.0 license. Any further distribution of this work must maintain attribution to the author(s) and the title of the work, journal citation and DOI.

References

  1. 1 D. B. Migas, V. L. Shaposhnicov, and V. E. Borisenko, Phys. Status Solidi B 244, 2611 (2007).
  2. 2 T. Nakamura, T. Suemasu, K. Takakura, F. Hasegawa, A. Wakahara, and M. Imai, Appl. Phys. Lett. 81, 1032 (2002).
  3. 3 A. Pokhrel, L. Samad, F. Meng, and S. Jin, Nanoscale 7, 17450 (2015).
  4. 4 M. Ajmal Khan, K. O. Hara, W. Du, M. Baba, K. Nakamura, M. Suzuno, K. Toko, N. Usami, and T. Suemasu, Appl. Phys. Lett. 102, 112107 (2013).
  5. 5 R. Takabe, K. Nakamura, M. Baba, W. Du, M. A. Khan, K. Toko, M. Sasase, K. O. Hara, N. Usami, and T. Suemasu, Jpn. J. Appl. Phys. 53, 04ER04 (2014).
  6. 6 K. Morita, Y. Inomata, and T. Suemasu, Thin Solid Films 508, 363 (2006).
  7. 7 Y. Matsumoto, D. Tsukada, R. Sasaki, M. Takeishi, and T. Suemasu, Appl. Phys. Express 2, 021101 (2009).
  8. 8 Y. Nakagawa, K. O. Hara, T. Suemasu, and N. Usami, Procedia Eng. 141, 23 (2016).
  9. 9 M. Pani and A. Palenzona, J. Alloys Compd. 454, L1 (2008).
  10. 10 S. Kishino, T. Imai, T. Iida, Y. Nakaishi, M. Shinada, Y. Takanashi, and N. Hamada, J. Alloys Compd. 428, 22 (2007).
  11. 11 J. Evers, J. Solid State Chem. 32, 77 (1980).
  12. 12 M. Imai and T. Hirano, Phys. Rev. B 58, 11922 (1998).
  13. 13 M. Imai, Chem. Mater. 15, 2543 (2003).
  14. 14 Crystallography Open Database (COD), http://www.crystallography.net #8103005 Ba2Si4.
  15. 15 D. V. Fomin, V. L. Dubov, K. N. Galkin, D. L. Goroshko, A. M. Maslov, N. G. Galkin, R. I. Batalov, and V. A. Shustov, Solid State Phenom. 245, 42 (2015).
  16. 16 Y. Inomata, T. Nakamura, T. Suemasu, and F. Hasegawa, Jpn. J. Appl. Phys. 43, L478 (2004).
  17. 17 K. Toh, T. Saito, and T. Suemasu, Jpn. J. Appl. Phys. 50, 068001 (2011).