JJAP Conference Proceedings

JJAP Conf. Proc. 5, 011402 (2017) doi:10.7567/JJAPCP.5.011402

Rod-like precipitates formed in vapor-deposited Fe-Si film

Shin-ichiro Kondo, Takao Morimura, Hiromichi Nakashima

  1. Department of Materials Science and Engineering, Nagasaki University, Nagasaki 852-8521, Japan
  • Received August 30, 2016
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Semiconducting β-FeSi2 is a potential candidate material for solar cells. Various fabrication methods have therefore been proposed for smart films of this material. However, the dynamics of β-FeSi2 formation are not fully understood and require investigation. Our experimental results based on TEM and SEM observations imply that the mechanism for forming iron silicide is very complex, and exhibits strong dependence on the fabrication method. Rod-like precipitates form in a sample fabricated with double iron deposition and no precipitates form in a sample fabricated with single iron deposition on a silicon substrate.

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  1. 1 L. Miglio, V. Meregalli, and O. Jepsen, Appl. Phys. Lett. 75, 385 (1999).
  2. 2 K. Yamaguchi and K. Mizushima, Phys. Rev. Lett. 86, 6006 (2001).
  3. 3 M. C. Bost and J. E. Mahan, J. Appl. Phys. 58, 2696 (1985).
  4. 4 V. E. Borisenko, Semiconducting Silicides (Springer, Berlin, 2000) 1st ed., Chap. 2.
  5. 5 N. Hiroi, T. Suemasu, K. Takakura, N. Seki, and F. Hasegawa, Jpn. J. Appl. Phys. 40, L1008 (2001).
  6. 6 M. Takauji, N. Seki, T. Suemasu, F. Hasegawa, and M. Ichida, J. Appl. Phys. 96, 2561 (2004).
  7. 7 T. Yoshitake, Y. Inokuchi, A. Yuri, and K. Nagayama, Appl. Phys. Lett. 88, 182104 (2006).