JJAP Conference Proceedings

JJAP Conf. Proc. 6, 011107 (2017) doi:10.7567/JJAPCP.6.011107

Physical properties of Cd doped CeIrIn5 under pressure

Ryoma Tsunoda1, Yusuke Hirose2, Rikio Settai2, Yusuke Hirose2, Rikio Settai2

  1. 1Graduate School of Science and Technology, Niigata University, Niigata 950-2181, Japan
  2. 2Department of Physics, Niigata University, Niigata 950-2181, Japan
  3. 1Graduate School of Science and Technology, Niigata University, Niigata 950-2181, Japan
  4. 2Department of Physics, Niigata University, Niigata 950-2181, Japan
  • Received November 14, 2016
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Abstract

We measured the electrical resistivity ρ of CeIr(In1−xCdx)5 under pressure for x = 0.05 and 0.10, which show the onset of superconductivity (SC) at Tsconset ~ 0.9 K and antiferromagnetic transition at TN ~ 3.4 K. For x = 0.05, Tsconset increases by applying pressure up to 2.8 GPa and zero resistivity is observed at Tscρ=0 above 2.4 GPa. For x = 0.10, the pressure dependence of TN shows peak at around 2 GPa and TN seems to be 0 K toward 3 GPa, where SC phase appears. The maximum value of Tscρ=0 is independent on amount of doped Cd, showing 1.35 K. We analyzed the temperature dependence of the electrical resistivity ρ for x = 0.05 and 0.10 under pressure using the following equation, ρ = ρ0 + ATn. This analysis revealed that ρ shows the sublinear temperature dependence (n < 1) in the wide temperature region above Tscρ=0, and ρ0 decreases abruptly in the pressure region where Tscρ=0 indicates a maximum.

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