JJAP Conference Proceedings

JJAP Conf. Proc. 8, 011003 (2020) doi:10.7567/JJAPCP.8.011003

Formation of Mg2Si1−xSnx Thin Films by Co-sputtering and Investigation of their p-type Electrical Conduction

Syotaro Fuse, Hiroshi Katsumata

  1. School of Science and Technology, Meiji University, Kawasaki 214-8571, Japan
  • Received September 30, 2019
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We obtained Mg2Si1−xSnx films on the c-plane sapphire and the (100) CaF2 substrates using the radio frequency (RF) magnetron co-sputtering method under various sputtering area ratio of Mg chips to Mg2Si (Sn) target and a subsequent two-step annealing process up to 400 °C. The X-ray diffraction (XRD) and energy-dispersive X-ray spectrometry (EDS) analysis of the samples confirmed that the obtained films were ternary Mg2Si1−xSnx films with a composition of x ≈ 0.31. Optical microscopy and EDS mapping images of Mg2Si and Mg2Si1−xSnx (x = 0.31) films after annealing at 400 °C showed remarkable Mg desorption from Mg2Si1−xSnx films, but not from Mg2Si films. The Hall effect measurements revealed that all Mg2Si1−xSnx films annealed at 400 °C had a p-type conductivity. The first-principles calculations suggested that a combination of two different types of defects, Sn substitution at Si site (SnSi) and Mg vacancy (VMg), which acts as an acceptor, could be the origin of the p-type conductivity of Mg2Si1−xSnx films.

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